CS3N90FA9H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS3N90FA9H
Manufacturer	Huajing Microelectronics
File Size	624.01 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS3N90FA9H-HuajingMicroelectronics.pdf

CS3N90FA9H Product details

Description

CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 900 3 30 4.7 enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |