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CS3N90FA9H - Silicon N-Channel Power MOSFET

General Description

enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS3N90FA9H
Manufacturer Huajing Microelectronics
File Size 624.01 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N90FA9H Datasheet

Full PDF Text Transcription for CS3N90FA9H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS3N90FA9H. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS3N90F A9H ○R General Description： CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology...

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l Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 900 3 30 4.7 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class

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