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CS540A3 - Silicon N-Channel Power MOSFET

General Description

enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS540A3
Manufacturer Huajing Microelectronics
File Size 537.81 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS540A3 Datasheet

Full PDF Text Transcription for CS540A3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS540A3. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS540 A3 ○R General Description： CS540 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology whic...

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nced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 100 33 150 30 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D

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