CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150°
VDSS
40 V
ID 60 A
PD(TC=25℃)
52
W
RDS(ON)Typ
8.5 mΩ.
Full PDF Text Transcription for CS60N04A4 (Reference)
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Silicon N-Channel Trench MOSFET CS60N04 A4 ○R General Description： CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which red...
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nhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150° VDSS 40 V ID 60 A PD(TC=25℃) 52 W RDS(ON)Typ 8.5 mΩ Applications： Power switch circuit of adaptor
CS60N04A4 Datasheet
