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CS6N70FB9D - Silicon N-Channel Power MOSFET

General Description

the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS6N70FB9D
Manufacturer Huajing Microelectronics
File Size 360.98 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS6N70FB9D Datasheet

Full PDF Text Transcription for CS6N70FB9D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS6N70FB9D. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS6N70F B9D ○R General Description： CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technolog...

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l Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 700 6 35 1.4 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and char

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