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CS6N70FA9D - Silicon N-Channel Power MOSFET

General Description

the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS6N70FA9D
Manufacturer Huajing Microelectronics
File Size 232.81 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS6N70FA9D Datasheet

Full PDF Text Transcription for CS6N70FA9D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS6N70FA9D. For precise diagrams, and layout, please refer to the original PDF.

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS6N70F A9D General Description： CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-...

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A9D the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for systemminiaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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