| Part number | CS6N70FB9D |
|---|---|
| Datasheet | CS6N70FB9D-HuajingMicroelectronics.pdf |
| File Size | 360.98 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 700 6 35 1.4 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS...
See all Huajing Microelectronics datasheets
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|---|---|
| CS6N70FA9D | Silicon N-Channel Power MOSFET |
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| CS6N70A3D-G | Silicon N-Channel Power MOSFET |
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| CS6N70A4D-G | Silicon N-Channel Power MOSFET |
| CS6N70A8D | Silicon N-Channel Power MOSFET |
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| CS6N70CRHD | Silicon N-Channel Power MOSFET |
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