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Silicon N-Channel Power MOSFET
CS6N70F B9D
○R
General Description：
CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
700 6 35 1.4
the avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS
standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS6N70FB9D Datasheet
