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CS6N80FA9 - Silicon N-Channel Power MOSFET

General Description

the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:35nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS6N80FA9
Manufacturer Huajing Microelectronics
File Size 846.69 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS6N80FA9 Datasheet

Full PDF Text Transcription for CS6N80FA9 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS6N80FA9. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS6N80F A9 ○R General Description： CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:35nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test Applications： Atx Power、LED Power.

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