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CS830A8RD - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS830A8RD
Manufacturer Huajing Microelectronics
File Size 249.21 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS830A8RD Datasheet

Full PDF Text Transcription for CS830A8RD (Reference)

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Silicon N-Channel Power MOSFET CS830 A8RD ○R General Description： CS830 A8RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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