CS840A8H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

enhance the avalanche energy.

Key Features

l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:18pF) l 100% Single Pulse avalanche energy Test.

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CS840A8H silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS840A8H
Manufacturer	Huajing Microelectronics
File Size	348.26 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS840A8H Datasheet

Full PDF Text Transcription for CS840A8H (Reference)

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Silicon N-Channel Power MOSFET CS840 A8H ○R General Description： CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology wh...

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hanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD (TC=25℃) RDS(ON)Typ 500 8 110 0.57 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:18pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor an

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