H57V1262GTR Description
and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
H57V1262GTR Key Features
- Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead Free Package
- Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms
- mercial Temperature (0oC to 70oC)
- Industrial Temperature (-40oC to 85oC) Operating Temperature
- Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 2, 3 Clocks Burst Read Single Write operation
- This product is in pliance with the directive pertaining of RoHS