Datasheet4U Logo Datasheet4U.com

H57V1262GTR Datasheet 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Manufacturer: SK Hynix

📥 Download Datasheet

Datasheet Details

Part number H57V1262GTR
Manufacturer SK Hynix
File Size 235.78 KB
Description 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Datasheet download datasheet H57V1262GTR Datasheet

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Overview

www.DataSheet4U.com 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No.

0.1 1.0 Initial Draft Release History Draft Date Jul.

2009 Aug.

Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
  • Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms - Commercial Temperature (0oC to 70oC) - Industrial Temperature (-40oC to 85oC) Operating Temperature.

More Datasheets from SK Hynix

Part Number Description
H57V1262GFR 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
H57V2562GFR 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
H57V2562GTR 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
H57V2582GTR 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60C 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60I 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60J 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60L 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-75C 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-75I 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O