H57V1262GFR Overview
and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Aug. 2009 1 .. Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series DESCRIPTION The Hynix H57V1262GFR series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory
H57V1262GFR Key Features
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 2, 3 Clocks Burst Read Single Write operation
- This product is in pliance with the directive pertaining of RoHS
H57V1262GFR Applications
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 2, 3 Clocks Burst Read Single Write operation
- This product is in pliance with the directive pertaining of RoHS