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H57V1262GFR

H57V1262GFR is 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O manufactured by SK Hynix.
H57V1262GFR datasheet preview

H57V1262GFR Datasheet

Part number H57V1262GFR
Download H57V1262GFR Datasheet (PDF)
File Size 285.34 KB
Manufacturer SK Hynix
Description 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
H57V1262GFR page 2 H57V1262GFR page 3

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H57V2562GTR 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
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H57V1262GFR Distributor

H57V1262GFR Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

H57V1262GFR Key Features

  • Voltage: VDD and VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Ball FBGA (Lead or Lead Fr
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or full page for Sequential Burst
  • 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 2, 3 Clocks Burst Read Single Write operation
  • This product is in pliance with the directive pertaining of RoHS

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