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H57V1262GFR - 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

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Hynix Semiconductor

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H57V1262GFR 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O by Hynix Semiconductor - Datasheet Preview — Datasheet preview – H57V1262GFR

Datasheet Details

Part number	H57V1262GFR
Manufacturer	Hynix Semiconductor
File Size	285.34 KB
Description	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Datasheet	H57V1262GFR Datasheet
Additional preview pages of the H57V1262GFR datasheet.

H57V1262GFR Product details

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

Voltage: VDD and VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms Operation temperature HY5V26F(L)F(P)-XX Series: 0 ~ 70oC HY5V26F(L)F(P)-X(I) Series: -40 ~ 85oC.

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Published: Sep 23, 2010 |