H57V1262GTR Overview
The Hynix H57V1262GTR series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory
H57V1262GTR Key Features
- Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead Free Package
- mercial Temperature (0oC to 70oC)
- Industrial Temperature (-40oC to 85oC) Operating Temperature - - - - Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 2, 3 Clocks Burst Read Single Write operation
- This product is in pliance with the directive pertaining of RoHS
H57V1262GTR Applications
- Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead Free Package
- mercial Temperature (0oC to 70oC)
- Industrial Temperature (-40oC to 85oC) Operating Temperature - - - - Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 2, 3 Clocks Burst Read Single Write operation
- This product is in pliance with the directive pertaining of RoHS