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H57V1262GTR - 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

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Hynix Semiconductor

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H57V1262GTR 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O by Hynix Semiconductor - Datasheet Preview — Datasheet preview – H57V1262GTR

Datasheet Details

Part number	H57V1262GTR
Manufacturer	Hynix Semiconductor
File Size	235.78 KB
Description	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Datasheet	H57V1262GTR Datasheet
Additional preview pages of the H57V1262GTR datasheet.

H57V1262GTR Product details

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms - Commercial Temperature (0oC to 70oC) - Industrial Temperature (-40oC to 85oC) Operating Temperature.

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Published: Sep 23, 2010 |