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H57V2582GTR-60J Datasheet, Hynix Semiconductor

H57V2582GTR-60J i/o equivalent, 256mb synchronous dram based on 8m x 4bank x8 i/o.

H57V2582GTR-60J Avg. rating / M : 1.0 rating-14

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H57V2582GTR-60J Datasheet

Features and benefits


* Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage int.

Application

which requires large memory density and high bandwidth. It is organized as 4banks of 8,388,608 x 8 I/O. Synchronous DRAM.

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