Sanken |
M368L3223FTN |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
ISSI (now Infineon) |
IS43QR16256B |
256Mb x 16 4Gb DDR4 SDRAM |
SK Hynix |
HY27US08561A |
(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
Samsung Semiconductor |
K4N56163QG |
256Mbit gDDR2 SDRAM |
White Electronic Designs Corporation |
W3DG6433V-D2 |
256MB- 32Mx64 SDRAM UNBUFFERED |
Infineon |
S26KS256S |
256Mb (32MB) HYPER FLASH |
Samsung Electronics |
K8F5615EBM |
256Mb M-die MLC NOR Specification |
|
Sanken |
M368L1624FTM-CB3AA |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Zentel |
A3S56D30ETP |
(A3S56D30ETP / A3S56D40ETP) 256Mb DDR SDRAM |
Samsung Semiconductor |
K4S560832C |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
|
Sanken |
M368L6423FTN |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Winbond |
W958D8NBYA |
256Mb HyperRAM |
Powerchip Semiconductor |
A2S56D30CTP |
256Mb DDR SDRAM |
|
SK Hynix |
H57V2562GTR |
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O |
|
Samsung Semiconductor |
K4S561632E-NC60 |
SDRAM 256Mb E-die |
|
Samsung Semiconductor |
K9F5608U0C-D |
512Mb/256Mb NAND Flash Errata |
|
Samsung Semiconductor |
K4T56083QF |
256Mb F-die DDR2 SDRAM |
|
Samsung Semiconductor |
K4H560838F-UCCC |
256Mb F-die DDR400 SDRAM |
Hitachi Semiconductor (now Renesas) |
HB56SW3272ESK |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
|
Samsung Semiconductor |
K4S561632D |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
