HY5DU121622DF sdram equivalent, 512mb ddr sdram.
*
* VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR4.
which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations r.
and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / May 2007 1
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1 HY5DU12822DF(P) / HY5DU121622DF(P)
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