HY5DU121622DTP datasheet, sdram equivalent, Hynix Semiconductor

Features and benefits

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* VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR4.

Application

which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations r.

Description

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan 2007 1 www.DataSheet.in 1Preliminary HY5DU12822DTP HY5DU121622DTP Revisio.

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