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HY5DU56422LT - (HY5DU56xx22A(L)T) 256M-S DDR SDRAM

Download the HY5DU56422LT datasheet PDF (HY5DU561622AT included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for (hy5du56xx22a(l)t) 256m-s ddr sdram.

Description

and is subject to change without notice.

Hynix semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS).
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Programmable CAS latency 1.5, 2, 2.5 an.

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Note: The manufacturer provides a single datasheet file (HY5DU561622AT_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY5DU56422LT
Manufacturer SK Hynix
File Size 529.85 KB
Description (HY5DU56xx22A(L)T) 256M-S DDR SDRAM
Datasheet download datasheet HY5DU56422LT Datasheet
Other Datasheets by Hynix Semiconductor

Full PDF Text Transcription

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www.DataSheet4U.com HY5DU56422A(L)T HY5DU56822A(L)T HY5DU561622A(L)T 256M-S DDR SDRAM HY5DU56422A(L)T HY5DU56822A(L)T HY5DU561622A(L)T DataSheet4U.com DataShee This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4/ May. 02 DataSheet4U.com www.DataSheet4U.com HY5DU56422A(L)T HY5DU56822A(L)T HY5DU561622A(L)T Revision History 1. Revision 0.2 (Jan. 02) 1) Define Preliminary Specification 2. Revision 0.3 (Mar. 02) 1) Define IDD Specification 2) Added programmable Cas Latrency 1.5 3) Changed VREF value from min (0.49*VDDQ) & max (0.
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