HY5S2B6DLF-BE Description
and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
HY5S2B6DLF-BE Key Features
- Voltage : VDD = 1.8V, VDDQ = 1.8V
- LVCMOS patible I/O Interface
- Low Voltage interface to reduce I/O power
- Low Power Features
- PASR(Partial Array Self Refresh)
- Auto TCSR (Temperature pensated Self Refresh)
- DS (Drive Strength)
- Deep Power Down Mode
- Programmable CAS latency of 1, 2 or 3 Pakage Type : 54Ball FBGA
- HY5S2B6DLF : Lead