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HY62U8200B Datasheet 256K x8 bit 3.0V Low Power CMOS slow SRAM

Manufacturer: SK Hynix

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General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

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Overview

HY62U8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No 03 History Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA => 30mA Change the Notch Location of sTSOP - Left-Top => Left-Center Marking Information Add Revised - AC Test Condition Add : 5pF Test Load - VIH max : Vcc + 0.2V => Vcc + 0.3V Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.29.2000 Remark Final 04 Sep.04.2000 Final 05 Dec.04.2000 Final 06 Apr.30.2001 Final www.DataSheet4U.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup( LL-part ) -. 2.0V(min) data retention.
  • Standard pin configuration -. 32-sTSOPI-8X13.4, 32-TSOPI -8X20 (Standard and Reversed) Product Voltage Speed Operation No. (V) (ns) Current/Icc(mA) HY62U8200B 2.7~3.3 70.
  • /85/100 5 HY62U8200B-E 2.7~3.3 70.
  • /85/100 5 HY62U8200B-I 2.7~3.3 70.
  • /85/100 5 Note 1. Blank : Commercial, E : Extended, I : Industrial 2. Current.

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