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DESCRIPTION
The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0 volt. It is suitable for use in high-density high-speed system applications.
FEATURES
A0 ROW DECODER I/O1 SENSE AMP
ADD INPUT BUFFER
WRITE DRIVER
A14 I/O8 /CS CONTROL LOGIC /OE /WE
COLUMN DECODER
OUTPUT BUFFER
• Single 5V±10% Power Supply • High speed - 15/20/25ns(max.) • Low power consumption(Max.