| Title | GaN FETs DC-14 GHz 100W Discrete GaN HEMT |
| Description | The ICPB1020 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse Width 100uS, Duty Cycle=10% Frequency Output Power P3dB Bias Current PAE @ P3dB Gain @ P3dB GHz dB mA % dB 3 51.6 400 77.7 21 Typical 6 10 14 51.6 51.6 ... |
| Features |
• Frequency Range DC-14GHz • 51.5dBm Nominal P3dB Pulsed • Maximum PAE at 6GHz of 71% • 18dB Linear Gain at 6GHz • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.82 x 4.56 x 0.10mm Applications • Aerospace & Defense • Broadband Wireless Image Description The ICPB1020 is a GaN on SiC discrete HEMT that ... |
| Datasheet |
 ICPB1020 Datasheet - 2.13MB |
| Distributor |
Mouser Electronics |
| Stock | 0 In stock |
| Price |
No price available
|
| BuyNow |
 No Longer Stocked - Manufacturer a Microchip Technology Inc ICPB1020-1-110I
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
No price available |
||
 Microchip Technology Inc |
1000 units: 147 USD 500 units: 149.8 USD 250 units: 155.4 USD 100 units: 165.2 USD 50 units: 179.2 USD 25 units: 196 USD 1 units: 291.2 USD |
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|
 Onlinecomponents.com |
5 units: 166.39 USD 4 units: 169.79 USD 3 units: 172.38 USD 2 units: 175 USD |
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|
 Richardson RFPD |
5 units: 194.44 USD 100 units: 189.19 USD |
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|
 Avnet Americas |
50 units: 179.2 USD 25 units: 196 USD 10 units: 219.8 USD 5 units: 250.6 USD 1 units: 291.2 USD |
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|
 Master Electronics |
5 units: 166.39 USD 4 units: 169.79 USD 3 units: 172.38 USD 2 units: 175 USD |
BuyNow |
