| Title | GaN FETs DC-12 GHz 25W Discrete GaN HEMT |
| Description | The ICPB2005 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V CW Typical Frequency GHz 3 6 10 Output Power P3dB Bias Current dBm mA 44.5 100 44.5 100 44.5 100 PAE @ P3dB % 68 Gain @ P3d... |
| Features |
• Frequency Range DC-12GHz • 44.5dBm Nominal P3dB • Maximum PAE at 6GHz of 65% • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.81 x 1.68 x 0.10mm Applications • Aerospace & Defense • Broadband Wireless Image Description The ICPB2005 is a GaN on SiC discrete HEMT, designed to operate either pulsed or C... |
| Datasheet |
 ICPB2005 Datasheet - 767.14KB |
| Distributor |
Mouser Electronics |
| Stock | 0 In stock |
| Price |
No price available
|
| BuyNow |
 No Longer Stocked - Manufacturer a Microchip Technology Inc ICPB2005-1-110I
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
No price available |
||
 Onlinecomponents.com |
10 units: 72.03 USD 8 units: 73.5 USD 5 units: 84 USD 3 units: 93.33 USD |
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|
 Richardson RFPD |
10 units: 77.78 USD 100 units: 75.68 USD 500 units: 73.68 USD |
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|
 Avnet Silica |
No price available |
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|
 Master Electronics |
10 units: 72.03 USD 8 units: 73.5 USD 5 units: 84 USD 3 units: 93.33 USD |
BuyNow |
