ICPB2005 - Discrete Power GaN HEMT

General Description

The ICPB2005 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz.

The design is optimized for power and efficiency using field plate technology.

Key Features

Frequency Range DC-12GHz.
44.5dBm Nominal P3dB.
Maximum PAE at 6GHz of 65%.
Drain Bias 28V.
Technology: GaN on SiC.
Lead-free and RoHS compliant.
Chip Dimensions: 0.81 x 1.68 x 0.10mm.

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ICPB2005 discrete power gan hemt by ICONIC RF - Datasheet Preview

Datasheet Details

Part number	ICPB2005
Manufacturer	ICONIC RF
File Size	767.14 KB
Description	Discrete Power GaN HEMT
Datasheet	ICPB2005 Datasheet

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Full PDF Text Transcription (Reference)

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ICPB2005 | Discrete Power GaN HEMT 25 Watt Features • Frequency Range DC-12GHz • 44.5dBm Nominal P3dB • Maximum PAE at 6GHz of 65% • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.81 x 1.68 x 0.10mm Applications • Aerospace & Defense • Broadband Wireless Image Description The ICPB2005 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V CW Typical Frequency GHz 3 6 10 Output Power P3dB Bias Current dBm mA 44.5 100 44.5 100 44.5 100 PAE @ P3dB % 68 Gain @ P3dB dB 19 65 57 13.5 9.