ICPB1020 - Discrete Power GaN HEMT

General Description

The ICPB1020 is a GaN on SiC discrete HEMT that operates from DC-14GHz.

The design is optimized for power and efficiency using field plate technology.

Key Features

Frequency Range DC-14GHz.
51.5dBm Nominal P3dB Pulsed.
Maximum PAE at 6GHz of 71%.
18dB Linear Gain at 6GHz.
Drain Bias 28V.
Technology: GaN on SiC.
Lead-free and RoHS compliant.
Chip Dimensions: 0.82 x 4.56 x 0.10mm.

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ICPB1020 discrete power gan hemt by ICONIC RF - Datasheet Preview

Datasheet Details

Part number	ICPB1020
Manufacturer	ICONIC RF
File Size	2.13 MB
Description	Discrete Power GaN HEMT
Datasheet	ICPB1020 Datasheet

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ICPB1020 | Discrete Power GaN HEMT 100 Watt Features • Frequency Range DC-14GHz • 51.5dBm Nominal P3dB Pulsed • Maximum PAE at 6GHz of 71% • 18dB Linear Gain at 6GHz • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.82 x 4.56 x 0.10mm Applications • Aerospace & Defense • Broadband Wireless Image Description The ICPB1020 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse Width 100uS, Duty Cycle=10% Frequency Output Power P3dB Bias Current PAE @ P3dB Gain @ P3dB GHz dB mA % dB 3 51.6 400 77.7 21 Typical 6 10 14 51.6 51.6 51.6 400 400 400 71.4 64.4 55.