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IC62LV5128LL - 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

Download the IC62LV5128LL datasheet PDF. This datasheet also covers the IC62LV5128L variant, as both devices belong to the same 512kx8 bit low voltage and ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, ICSI's low voltage, six transistor (6T), CMOS technology.

device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers.

Key Features

  • Access times of 55, 70, 100 ns.
  • CMOS Low power operation:.
  • 60 mW (typical) operation.
  • 3 µW (typical) standby.
  • Low data retention voltage: 1.5V (min. ).
  • Output Enable (OE) and Chip Enable (CE) inputs for ease in.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IC62LV5128L_ICSI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IC62LV5128LL
Manufacturer ICSI
File Size 198.07 KB
Description 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
Datasheet download datasheet IC62LV5128LL Datasheet

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Other Datasheets by ICSI

Part Number Description
IC62LV5128L 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
IC62LV51216L 512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM
IC62LV51216LL 512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM
IC62LV1008L 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
IC62LV1008LL 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com IC62LV5128L IC62LV5128LL Document Title 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Initial Draft Draft Date May 1,2001 Remark Preliminary 1. Change for tPWE: 45 to 40 ns for 55 ns product August 31,2001 : 60 to 40 ns for 70 ns product 2. Change for VCC: 2.2-3.6V to 2.7-3.6V 3.1 Change for ICC test conditiomn: VCC=Max. to 3V 3.2 Change for ICC: 30 to 25mA for 55 ns product 25 to 20mA for 70 ns porduct 20 to 15 mA for 100 ns product 4.1 Change for VDR Min. : 1.2 to 1.5V 4.2 Change for IDR test condition: VCC=1.2 to 1.5V and IDR 5. Change for tHZCE 25 to 20 ns for 55 ns product 6. Change for tHZWE 33 to 30 ns for 70 ns product The attached datasheets are provided by ICSI.