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IC62LV5128LL Datasheet 512kx8 Bit Low Voltage And Ultra Low Power CMOS Static Ram

Manufacturer: ICSI

Overview: .. IC62LV5128L IC62LV5128LL Document Title 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Initial Draft Draft Date May 1,2001 Remark Preliminary 1. Change for tPWE: 45 to 40 ns for 55 ns product August 31,2001 : 60 to 40 ns for 70 ns product 2. Change for VCC: 2.2-3.6V to 2.7-3.6V 3.1 Change for ICC test conditiomn: VCC=Max. to 3V 3.2 Change for ICC: 30 to 25mA for 55 ns product 25 to 20mA for 70 ns porduct 20 to 15 mA for 100 ns product 4.1 Change for VDR Min. : 1.2 to 1.5V 4.2 Change for IDR test condition: VCC=1.2 to 1.5V and IDR 5. Change for tHZCE 25 to 20 ns for 55 ns product 6. Change for tHZWE 33 to 30 ns for 70 ns product The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, ICSI's low voltage, six transistor (6T), CMOS technology.

The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Key Features

  • Access times of 55, 70, 100 ns.
  • CMOS Low power operation:.
  • 60 mW (typical) operation.
  • 3 µW (typical) standby.
  • Low data retention voltage: 1.5V (min. ).
  • Output Enable (OE) and Chip Enable (CE) inputs for ease in.

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