F6503 Description
The F6503 is an 8-channel transmitter (TX) silicon IC designed using a SiGe BiCMOS process for CDL phased array applications. The core IC has 360° 6-bit phase control coupled with 35dB 6-bit gain control on each channel to achieve fine beam steering and gain pensation between radiating channels. The device has a 25dB nominal gain and 13dBm OP1dB.
F6503 Key Features
- 14GHz to 16GHz operation
- 8 radiation channels
- 6-bit phase control
- 6-bit gain control
- 50ns typical gain settling time
- 20ns typical phase settling time
- 3° typical RMS phase error
- 0.4dB typical RMS gain error
- 35dB gain attenuation range
- 5-bit IC address