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IDT71V124SA Datasheet

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

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3.3V CMOS Static RAM
1 Meg (128K x 8-Bit)
Center Power &
Ground Pinout
IDT71V124SA
Features
128K x 8 advanced high-speed CMOS static RAM
JEDEC revolutionary pinout (center power/GND) for
reduced noise
Equal access and cycle times
– Commercial: 10/12/15ns
– Industrial: 12/15ns
One Chip Select plus one Output Enable pin
Inputs and outputs are LVTTL-compatible
Single 3.3V supply
Low power consumption via chip deselect
Available in a 32-pin 300- and 400-mil Plastic SOJ, and
32-pin Type II TSOP packages.
Description
The IDT71V124 is a 1,048,576-bit high-speed static RAM organized
as 128K x 8. It is fabricated using high-performance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs. The JEDEC center power/GND pinout reduces noise
generation and improves system performance.
The IDT71V124 has an output enable pin which operates as fast as
5ns, with address access times as fast as 10ns available. All bidirectional
inputs and outputs of the IDT71V124 are LVTTL-compatible and operation
is from a single 3.3V supply. Fully static asynchronous circuitry is used;
no clocks or refreshes are required for operation.
Functional Block Diagram
A0
A16
ADDRESS
DECODER
1,048,576-BIT
MEMORY ARRAY
I/O0 - I/O7
8
8
WE
OE CONTROL
CS LOGIC
I/O CONTROL
8
.
3873 drw 01
1
© 2013 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
FEBRUARY 2013
DSC-3873/11


Integrated Device Technology Electronic Components Datasheet

IDT71V124SA Datasheet

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

No Preview Available !

IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Commercial and Industrial Temperature Ranges
Pin Configuration
A0
A1
A2
A3
CS
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A4
A5
A6
A7
1 32
2 31
3 30
4 29
5 28
6 SO32-2 27
7 SO32-3 26
8 SO32-4 25
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
A16
A15
A14
A13
OE
I/O7
I/O6
GND
VDD
I/O5
I/O4
A12
A11
A10
A9
A8
.
3873 drw 02
SOJ and TSOP
Top View
Truth Table(1)
CS OE WE
I/O
Function
L L H DATAOUT Read Data
L X L DATAIN Write Data
L H H High-Z Output Disabled
H X X High-Z Deselected – Standby
NOTE:
1. H = VIH, L = VIL, X = Don't care.
3873 tbl 01
Absolute Maximum Ratings(1)
Symbol
Rating
Value
Unit
VDD Supply Voltage Relative
to GND
-0.5 to +4.6
V
VIN, VOUT Terminal Voltage Relative
to GND
-0.5 to VDD+0.5
V
Commercial
Operating Temperature
TA
Industrial
Operating Temperature
-0 to +70
-40 to +85
oC
TBIAS Temperature Under Bias
-55 to +125
oC
TSTG Storage Temperature
-55 to +125
oC
PT Power Dissipation
1.25 W
IOUT DC Output Current
50 mA
NOTE:
3873 tbl 02
1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliabilty.
Recommended Operating Tempera-
ture and Supply Voltage
Grade
Commercial
Industrial
Temperature
0°C to +70°C
-40°C to +85°C
GND VDD
0V See Below
0V See Below
3873 tbl 02a
Recommended DC Operating
Conditions
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol
Parameter(1)
Conditions Max.
Unit
Symbol
Parameter
VDD(1) Supply Voltage
VDD(2) Supply Voltage
Min. Typ. Max. Unit
3.15 3.3
3.6
V
3.0 3.3
3.6
V
CIN Input Capacitance
VIN = 3dV
6 pF
VSS Ground
00 0 V
CI/O I/O Capacitance
VOUT = 3dV
7 pF
VIH Input High Voltage
2.0 ____ VDD+0.3(3) V
NOTE:
3873 tbl 03
1. This parameter is guaranteed by device characterization, but is not production tested.
DC Electrical Characteristics
VIL Input Low Voltage
–0.5(1) ____
0.8
NOTES:
1. For 71V124SA10 only.
2. For all speed grades except 71V124SA10.
3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
V
3873 tbl 04
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
Symbol
Parameter
Test Conditions
Min. Max. Unit
|ILI| Input Leakage Current
VDD = Max., VIN = GND to VDD
___ 5 µA
|ILO| Output Leakage Current
VDD = Max.,CS = VIH, VOUT = GND to VDD
___ 5 µA
VOL Output Low Voltage
IOL = 8mA, VDD = Min.
___ 0.4 V
VOH Output High Voltage
IOH = –4mA, VDD = Min.
2.4 ___ V
3873 tbl 05
2


Part Number IDT71V124SA
Description 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Maker IDT
Total Page 8 Pages
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