IDT71V25761YS
IDT71V25761YS is 128K x 36 3.3V Synchronous SRAMs manufactured by IDT.
128K X 36
IDT71V25761YS/S
3.3V Synchronous SRAMs
2.5V I/O, Pipelined Outputs,
Burst Counter, Single Cycle Deselect
Features
- 128K x 36 memory configuration
- Supports high system speed: mercial:
- 200MHz 3.1ns clock access time mercial and Industrial:
- 183MHz 3.3ns clock access time
- 166MHz 3.5ns clock access time
- LBO input selects interleaved or linear burst mode
- Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)
- 3.3V core power supply
- Power down controlled by ZZ input
- 2.5V I/O
- Optional
- Boundary Scan JTAG Interface (IEEE 1149.1 pliant)
- Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array
Description
The IDT71V25761 are high-speed SRAMs organized as 128K x 36. The IDT71V25761 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write...
