IDT71V25761YS Description
The IDT71V25761 are high-speed SRAMs organized as 128K x 36. The IDT71V25761 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based.
IDT71V25761YS Key Features
- 128K x 36 memory configuration
- Supports high system speed
- 200MHz 3.1ns clock access time mercial and Industrial
- 183MHz 3.3ns clock access time
- 166MHz 3.5ns clock access time
- LBO input selects interleaved or linear burst mode
- Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)
- 3.3V core power supply
- Power down controlled by ZZ input
- 2.5V I/O