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Integrated Device Technology Electronic Components Datasheet

IDT71V3578S Datasheet

3.3V Synchronous SRAMs

No Preview Available !

128K x 36, 256K x 18
3.3V Synchronous SRAMs
3.3V I/O, Pipelined Outputs
Burst Counter, Single Cycle Deselect
IDT71V3576S
IDT71V3578S
Features
128K x 36, 256K x 18 memory configurations
Supports high system speed:
Commercial and Industrial:
– 150MHz 3.8ns clock access time
– 133MHz 4.2ns clock access time
LBO input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte write
enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP)
Description
The IDT71V3576/78 are high-speed SRAMs organized as
128K x 36/256K x 18. The IDT71V3576/78 SRAMs contain write, data,
addressandcontrolregisters. InternallogicallowstheSRAMtogenerate
a self-timed write based upon a decision which can be left until the end of
the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V3576/78 can provide four cycles of data
for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will be pipelined for one
cycle before it is available on the next rising clock edge. If burst mode
operation is selected (ADV=LOW), the subsequent three cycles of output
datawillbeavailabletotheuseronthenextthreerisingclockedges. The
order of these three addresses are defined by the internal burst counter
and the LBO input pin.
The IDT71V3576/78 SRAMs utilize the latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP).
Pin Description Summary
A0-A17
Address Inputs
CE Chip Enable
CS0, CS1
Chip Selects
OE Output Enable
GW Global Write Enable
BWE Byte Write Enable
BW1, BW2, BW3, BW4(1)
Individual Byte Write Selects
CLK Clock
ADV Burst Address Advance
ADSC
Address Status (Cache Controller)
ADSP
Address Status (Processor)
LBO Linear / Interleaved Burst Order
ZZ Sleep Mode
I/O0-I/O31, I/OP1-I/OP4
Data Input / Output
VDD, VDDQ
Core Power, I/O Power
VSS Ground
NOTE:
1. BW3 and BW4 are not applicable for the IDT71V3578.
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Asynchronous
Synchronous
N/A
N/A
5279 tbl 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
©2015 Integrated Device Technology, Inc.
1
DECEMBER 2015
DSC-5279/07


Integrated Device Technology Electronic Components Datasheet

IDT71V3578S Datasheet

3.3V Synchronous SRAMs

No Preview Available !

IDT71V3576, IDT71V3578, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Definitions(1)
Symbol
Pin Function
I/O Active Description
A0-A17
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a combination of the rising edge
of CLK and ADSC Low or ADSP Low and CE Low.
ADSC
Address Status
(Cache Controller)
I
LOW
Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is used to load
the address registers with new addresses.
ADSP
Address Status
(Processor)
I
LOW
Synchronous Address Status from Processor. ADSP is an active LOW input that is used to load the
address registers with new addresses. ADSP is gated by CE.
ADV
Burst Address
Advance
Synchronous Address Advance. ADV is an active LOW input that is used to advance the internal
I LOW burst counter, controlling burst access after the initial address is loaded. When the input is HIGH the
burst counter is not incremented; that is, there is no address advance.
Synchronous byte write enable gates the byte write inputs BW1-BW4. If BWE is LOW at the rising
BWE Byte Write Enable I LOW edge of CLK then BWx inputs are passed to the next stage in the circuit. If BWE is HIGH then the
byte write inputs are blocked and only GW can initiate a write cycle.
BW1-BW4
Individual Byte
Write Enables
I
LOW
Synchronous byte write enables. BW1 controls I/O0-7, I/OP1, BW2 controls I/O8-15, I/OP2, etc. Any
active byte write causes all outputs to be disabled.
CE
Chip Enable
I
LOW
Synchronous chip enable. CE is used with CS0 and CS1 to enable the IDT71V3576/78. CE also gates
ADSP.
CLK
Clock
I N/A This is the clock input. All timing references for the device are made with respect to this input.
CS0
Chip Select 0
I HIGH Synchronous active HIGH chip select. CS0 is used with CE and CS1 to enable the chip.
CS1
Chip Select 1
I LOW Synchronous active LOW chip select. CS1 is used with CE and CS0 to enable the chip.
GW
Global Write
Enable
I
LOW
Synchronous global write enable. This input will write all four 9-bit data bytes when LOW on the rising
edge of CLK. GW supersedes individual byte write enables.
I/O0-I/O31
I/OP1-I/OP4
Data Input/Output
I/O
N/A
Synchronous data input/output (I/O) pins. Both the data input path and data output path are registered
and triggered by the rising edge of CLK.
Asynchronous burst order selection input. When LBO is HIGH, the interleaved burst sequence is
LBO
Linear Burst Order
I
LOW selected. When LBO is LOW the Linear burst sequence is selected. LBO is a static input and must
not change state while the device is operating.
OE
Output Enable
I
LOW
Asynchronous output enable. When OE is LOW the data output drivers are enabled on the I/O pins if
the chip is also selected. When OE is HIGH the I/O pins are in a high-impedance state.
Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the
ZZ
Sleep Mode
I HIGH IDT71V3576/78 to its lowest power consumption level. Data retention is guaranteed in Sleep
Mode.This pin has an internal pull down.
VDD
Power Supply
N/A N/A 3.3V core power supply.
VDDQ
Power Supply
N/A N/A 3.3V I/O Supply.
VSS
Ground
N/A N/A Ground.
NC
No Connect
N/A N/A NC pins are not electrically connected to the device.
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
5279 tbl 02
6.422


Part Number IDT71V3578S
Description 3.3V Synchronous SRAMs
Maker IDT
Total Page 18 Pages
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