• Equivalent to JEDEC standard 8K x 8 monolithic RAM
• 8,192 x 8 CMOS static RAM module complete with decoder
and decoupling capacitor
• High-speed 65 (commercial only) 75/85/120/150/200ns
(equal access and cycle times)
• Low power consumption, less than 1 watt maximum
• Two pinout options (64K EPROM & 64K static RAM)
• Utilizes IDT6116s - high performance 16K RAMs produced
with advanced CEMOS'"I technology
• CEMOS I process virtually eliminates alpha particle soft
error rates (with no organic die coating)
• Single 5V (±10%) power supply
• Input and output directly TTL-compatible
• Static operation: no clocks or refresh required
• Military modules available with semiconductor components
100% screened to MIL-STD-883 Class B
The IDT7M864/IDT8M864 are 64K (8,192 x 8 bit) high speed
static RAMs constructed on a ceramic substrate using 41DT6116
(2,048 x 8) static RAMs in lead less chip carriers. Functional
equivalence to ·a monolithic 64K static RAM is achieved by
utilization of an on-board decoder circuit that interprets the
higher order addresses A" and A'2 to select one of the four 2Kx8
RAMs. Extremely fast speeds can be achieved with this
technique due to use of the IDT6116 fabricated in IDT's high
performance, high-reliability technology - CEMOS'"I. This
state-of-the-art technology, combined with innovative circuit
design techniques, provides the fastest 16K static RAMs
The IDT7M864/IDT8M864 are available with access times as
fast as 65ns for commercial and 75ns for military temperature
ranges, with maximum power consumption of only 990mw' The
circuit also offers a reduced power standby mode. When CS ,
high and/or CS2 (7MB64) goes low, the circuit will automatically
go to, and remain in, a standby mode as long as these conditions
are held. In the standby mode, the module consumes less than
440mW. Substantially lower power levels can be achieved in the
ISB1 mode (less than 20mW max.) and 2V data retention mode
(less than 3mW max.) - see "DC Characteristics" and "Data
Retention Characteristics" for details.
Pinout of the IDTBM864 is equivalent to the 64K EPROMs (no
connect on pin 26), ideal for applications requiring easy micro-
code changes during prototyping. The IDT7M864's pinout is
compatible with monolithic 64K static RAMs (CS2 on pin 26).
All inputs and outputs of the IDT7M864/IDT8MB64 are TTL-
compatible and operate from a single 5V supply, thus simplifying
system designs. Full asyncronous circuitry is used, requiring no
clocks or refreshing for operation, and provides equal access and
cycle times for ease of use.
AIiIDT module semiconductor components are processed in
compliance to the test methods of MIL-STD-883, as shown on
back of data sheet, making them ideally, suited for applications
demanding the highest level of performance and reliability.
r----Pin #1 Identifier-,
A. 25 A.
,. DOAs ------ 24 A.
A2 21 AiD
A, 20 CS,
1/03 13 [
0GND 14 [
A. 25 A.
As 24~----- A.
21 A 10
A, 20 CS1
1/0 2 ,2
1103 '3 [
GND 14 [
WE WRITE ENABLE
OE OUTPUT ENABLE
CEMOS is a trademark of Integrated Device Technology, Inc.
FUNCTIONAL BLOCK DIAGRAM
- -~ lOT.".
f - - 2KxB
f- ~ ;T~~I~
AU . Au -
L - - 2KxS
L - 2Kx8
MILITARY AND COMMERCIAL TEMPERATURE_ RANGES