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Integrated Device Technology Electronic Components Datasheet

IDT7M864 Datasheet

64K CMOS STATIC RAMPAK

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• Equivalent to JEDEC standard 8K x 8 monolithic RAM
• 8,192 x 8 CMOS static RAM module complete with decoder
and decoupling capacitor
• High-speed 65 (commercial only) 75/85/120/150/200ns
(equal access and cycle times)
• Low power consumption, less than 1 watt maximum
• Two pinout options (64K EPROM & 64K static RAM)
• Utilizes IDT6116s - high performance 16K RAMs produced
with advanced CEMOS'"I technology
• CEMOS I process virtually eliminates alpha particle soft
error rates (with no organic die coating)
• Single 5V (±10%) power supply
• Input and output directly TTL-compatible
• Static operation: no clocks or refresh required
• Military modules available with semiconductor components
100% screened to MIL-STD-883 Class B
DESCRIPTION:
The IDT7M864/IDT8M864 are 64K (8,192 x 8 bit) high speed
static RAMs constructed on a ceramic substrate using 41DT6116
(2,048 x 8) static RAMs in lead less chip carriers. Functional
equivalence to ·a monolithic 64K static RAM is achieved by
utilization of an on-board decoder circuit that interprets the
higher order addresses A" and A'2 to select one of the four 2Kx8
RAMs. Extremely fast speeds can be achieved with this
technique due to use of the IDT6116 fabricated in IDT's high
performance, high-reliability technology - CEMOS'"I. This
state-of-the-art technology, combined with innovative circuit
design techniques, provides the fastest 16K static RAMs
available.
The IDT7M864/IDT8M864 are available with access times as
fast as 65ns for commercial and 75ns for military temperature
ranges, with maximum power consumption of only 990mw' The
circuit also offers a reduced power standby mode. When CS ,
high and/or CS2 (7MB64) goes low, the circuit will automatically
go to, and remain in, a standby mode as long as these conditions
are held. In the standby mode, the module consumes less than
440mW. Substantially lower power levels can be achieved in the
ISB1 mode (less than 20mW max.) and 2V data retention mode
(less than 3mW max.) - see "DC Characteristics" and "Data
Retention Characteristics" for details.
Pinout of the IDTBM864 is equivalent to the 64K EPROMs (no
connect on pin 26), ideal for applications requiring easy micro-
code changes during prototyping. The IDT7M864's pinout is
compatible with monolithic 64K static RAMs (CS2 on pin 26).
All inputs and outputs of the IDT7M864/IDT8MB64 are TTL-
compatible and operate from a single 5V supply, thus simplifying
system designs. Full asyncronous circuitry is used, requiring no
clocks or refreshing for operation, and provides equal access and
cycle times for ease of use.
AIiIDT module semiconductor components are processed in
compliance to the test methods of MIL-STD-883, as shown on
back of data sheet, making them ideally, suited for applications
demanding the highest level of performance and reliability.
PIN CONFIGURATIONS
r----Pin #1 Identifier-,
NC
2S vcc
NC
r;:w====;l
28
vee
An
27 WE
An
27 WE
A7
26 CS2
A7
26 NC
A. 25 A.
,. DOAs ------ 24 A.
A4 6
A3
23 A11
22 liE
A2 21 AiD
A, 20 CS,
A.
1/0 1
"11°2 12
1/03 13 [
0GND 14 [
19 110.
18 1/07
17 IIOe
16 1/05
15 1I04
A. 25 A.
As 24~----- A.
DOA4 6
A3
A2
23 A"
22 OE
21 A 10
A, 20 CS1
A. ,D
" 01/01
1/0 2 ,2
1103 '3 [
GND 14 [
19 1/0.
18 1/07
17 IIOe
16 1/05
15 1/04
7M864
PIN NAMES
8M864
Ao-A,.
1/0,-1/0.
CS"CS,
Vee
ADDRESS
DATA INPUTIOUTPUT
CHIP SELECT
POWER
WE WRITE ENABLE
OE OUTPUT ENABLE
GND GROUND
CEMOS is a trademark of Integrated Device Technology, Inc.
FUNCTIONAL BLOCK DIAGRAM
AO·A10
110, ·110.
WE
liE
-
- -~ lOT.".
2Kx8
1--~ ;T~~I~
RAM
CS
-
- IOT6116
f - - 2KxB
f- ~ ;T~~I~
RAM
CS
AU . Au -
CS1 -
CSt -
(7M864 only)
.----
L-
IDTSllS
L - - 2KxS
'-----
CMOS
STATIC
RAM
r-J
~8coder
'---
~
L-
IDTS"S
L - 2Kx8
'-----
CMOS
STATIC
RAM
T
r
MILITARY AND COMMERCIAL TEMPERATURE_ RANGES
JUNE 1985
7-55
fI


Integrated Device Technology Electronic Components Datasheet

IDT7M864 Datasheet

64K CMOS STATIC RAMPAK

No Preview Available !

IDT7M864/1DT8M864 64K (8K x 8) CMOS STATIC RAMPAK
TRUTH TABLE
MODE
Standby
Standby
Read
Read
Write
cs, Cs, OE WE 1/0 OPERATION
HXXX
HighZ
X L XX
HighZ
L H LH
DoUT
L HHH
HighZ
LHX L
DIN
MILITARY AND COMMERCIAL TEMPERATURE RANGES
RECOMMENDED DC OPERATING
CONDITIONS
=(TA -55·C to + 125·C and O·C to + 70·C)
SYMBOL PARAMETER
MIN. TYP.
Vee Supply Voltage
4.5 5.0
GND Supply Voltage
00
VIH Input High Voltage 2.2 3.5
-VIL Input Low Voltage -0.5 •
CL Output Load
--
TTL Output Load
--
='VIL min -1.0V for pulse width less than 2Ons.
MAX.
5.5
0
6.0
.65
100
1
UNIT
V
V
V
V
pF
-
DC ELECTRICAL CHARACTERISTICS (Vcc=5V ± 10%, TA= -55·C to + 125·C and O·C to + 70·C)
SYMBOL
PARAMETER
Ilul Input Leakage Current
IILOI Output Leakage Current
Icc Operating Power. Supply Current
ICCl Dynamic Operating Current
ISB Standby Power Supply Current
ISBl Full Standby Power Supply
Current
VOL Output Low Voltage
VOH Output High Voltage
1. Vcc-5V, TA =25°C
2. 'SBlmax at commercial temperature = 1.0 mA
TEST CONDITIONS
Vcc = 5.5V, VIN = OV to Vcc
OE or CS, ~ VIH, or cs, " VIl> VOUT = OV to Vee
CS, " VIl> CS, ~ VIH, Output Open
Min. Duty Cycle = 100%
CS, ~ VIH, or CS,,, V,L
CS, ~ Va:;- 0.2V, andlor CS," 0.2V
Y,N ~ Vcc - 0.2V or" 0.2V
10L = 4mA
10H = -lmA
IDT7M86418M864
MIN. Typ.(l) MAX.
- - 15
- - 15
- 65 180
- 65 180
- 20 80
- .016 3.6(2)
--
2.4 -
0.4
-
UNIT
~A
~A
rnA
rnA
rnA
mA
V
V
ABSOLUTE MAXIMUM RATINGS(l)
SYMBOL
RATING
COMMERCIAL
MILITARY
VTERM
TA
Terminal Voltage with
Respect to GND
Operating Temperature
-0.5 to + 7.0 -0.5 to +7.0
oto + 70
-55 to + 125
TBIAS Temperature Under Bias
-10 to +85 -65to+135
TSTG
Storage Temperalure
-55to +125 -65 to +150
Pr Power Dissipation
4.0 4.0
lOUT DC Output Current
50 50
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This Is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated In the operational sec~
tlons of this specification is not Implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
UNIT
V
·C
·C
·C
W
rnA
AC TEST CON DITIONS
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Times
10ns
Input and Output Timing Reference
Levels
1.5V
Output Load
1 TTL Gate and CL= 100pF
(including scope and jig)
CAPACITANCE (TA = 25°C, f = 1.0 MHz)
SYMBOL
ITEM
CONDITIONS MAX.
C'N
COUT
Input Capacitance VIN=OV
Output Capacitance VOUT=OV
28
33
NOTE: This parameter is sampled and not 100% tested.
UNIT
pF
pF
7-56


Part Number IDT7M864
Description 64K CMOS STATIC RAMPAK
Maker IDT
Total Page 5 Pages
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