10N12 - N-Channel MOSFET

Features

Drain Current.
ID= 10A@ TC=25℃.
Drain Source Voltage- : VDSS= 120V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max).
SOA is Power-Dissipation Limited.
Nanosecond Switching Speeds.
High Input Impedance.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	10N12
Manufacturer	INCHANGE
File Size	255.16 KB
Description	N-Channel MOSFET
Datasheet	10N12 Datasheet
Additional preview pages of the 10N12 datasheet.

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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·SOA is Power-Dissipation Limited ·Nanosecond Switching Speeds ·High Input Impedance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for switching converters,motor dirvers,relay dirvers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 120 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Plused 25 A PD Total Dissipation @TC=25℃ 75 W Tj Max.

Published: Oct 18, 2020 |