Datasheet4U Logo Datasheet4U.com

2N3055 - NPN Transistor

Description

Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJ2955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

📥 Download Datasheet

Datasheet preview – 2N3055

📁 Similar Datasheet

  • 2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (STMicroelectronics)
  • 2N3055 - NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
  • 2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (CENTRAL SEMICONDUCTOR)
  • 2N3055 - NPN Power Silicon Transistor (VPT)
  • 2N3055 - Silicon NPN Power Transistors (SavantIC)
  • 2N3055 - NPN Power Transistor (TAITRON)
  • 2N3055 - Silicon NPN Power Transistor (NTE)
  • 2N3055 - NPN Power Silicon Transistor (Aeroflex)
  • 2N3055 - Complementary Power Transistors (Multicomp)
  • 2N3055 - Silicon NPN Transistor (Toshiba)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
Published: |