Datasheet Details
| Part number | 2N3055 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.18 KB |
| Description | NPN Transistor |
| Datasheet |
 2N3055 Datasheet
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| Part number | 2N3055 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.18 KB |
| Description | NPN Transistor |
| Datasheet |
2N3055 Datasheet
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·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 115 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W 2N3055 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3055 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
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2N3055 | NPN POWER SILICON TRANSISTOR | Microsemi Corporation |
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2N3055 | COMPLEMENTARY SILICON POWER TRANSISTORS | CENTRAL SEMICONDUCTOR |
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2N3055 | NPN Power Silicon Transistor | VPT |
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2N3055 | Silicon NPN Power Transistors | SavantIC |
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