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2N3055 Datasheet Preview

2N3055 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
·Complement to Type MJ2955
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER Collector-Emitter Voltage
70
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25
115
W
TJ, Tstg
Operating and Storage Junction
Temperature Range
-65~+150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.52 /W
2N3055
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N3055 Datasheet Preview

2N3055 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC=0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
Is/b
fT
DC Current Gain
Second Breakdown Collector
Current with Base Forward Biased
Current Gain-Bandwidth Product
IC= 10A ; VCE= 4V
VCE= 40V,t= 1.0s,Nonrepetitive
IC= 0.5A ; VCE= 10V;f=1.0MHz
2N3055
MIN MAX UNIT
60
V
1.1
V
3.0
V
1.5
V
0.7 mA
5.0 mA
20
70
5.0
2.87
A
2.5
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N3055
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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2N3055 Datasheet PDF





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