STMicroelectronics 2N3055
The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications.| Part No. | 2N3055 |
|---|---|
| Datasheet | 2N3055 Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Low collector-emitter saturation voltage● Complementary NPN - PNP transistors
APPLICATIONS
● General purpose● Audio amplifier
DESCRIPTION
Order code 2N3055 MJ2955 Table 1. Device summary Marking Package 2N3055 MJ2955 TO-3 Packaging Tray November 2013 This is information on a product in full production. DocID4079 Rev 8 1/7 Absolute maximum rating 1 Absolute maximum rating 2N3055, MJ2955 Table 2. Absolute maximum rating Symbol Parameter VCBO VCER VCEO VEBO IC IB PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (RBE = 100 Ω) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Base current Total dissipation at Tc ≤ 25°C Storage temperature Max. operating junction temperature NPN PNP Value 2N3055 MJ2955 100 70 60 7 15 7 115 -65 to 200 200 Unit V V V V A A W °C °C Note: Symbol Table 3. Thermal data Parameter Rthj-case Thermal resistance junction-case max For PNP type voltage and current values are negative Value 1.5 Unit °C/W...
