2N3055 - Complementary Silicon Power Transistors

onsemi

Key Features

DC Current Gain.
hFE = 20.
70 @ IC = 4 Adc.
Collector.
Emitter Saturation Voltage.
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc.
Excellent Safe Operating Area.
Pb.
Free Packages are Available.

2N3055 complementary silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	2N3055
Manufacturer	onsemi
File Size	190.96 KB
Description	Complementary Silicon Power Transistors
Datasheet	2N3055 Datasheet

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Other Datasheets by onsemi

Part Number	Description
2N3055A	Complementary Silicon High-Power Transistor
2N3055AG	Complementary Silicon High-Power Transistors
2N3055G	Complementary Silicon Power Transistors
2N3019	Low Power Transistor
2N3019S	Low Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features  DC Current Gain − hFE = 20 −70 @ IC = 4 Adc  Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc  Excellent Safe Operating Area  Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25C Derate Above 25C VCEO VCER VCB VEB IC IB PD 60 70 100 7 15 7 115 0.