2N3055 Description
plementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) plementary silicon power transistors are designed for general−purpose switching and amplifier applications.
2N3055 Key Features
- DC Current Gain
- hFE = 20 -70 @ IC = 4 Adc
- Collector-Emitter Saturation Voltage
- VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
- Excellent Safe Operating Area
- Pb-Free Packages are Available
- Continuous Base Current Total Power Dissipation @ TC = 25C Derate Above 25C
- For additional information on our Pb-Free strategy and soldering details, please download the onsemi Soldering and Mount
- Rev. 7
2N3055 Applications
- For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERR