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2N3055G - Complementary Silicon Power Transistors

Download the 2N3055G datasheet PDF. This datasheet also covers the 2N3055 variant, as both devices belong to the same complementary silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • DC Current Gain.
  • hFE = 20.
  • 70 @ IC = 4 Adc.
  • Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc.
  • Excellent Safe Operating Area.
  • Pb.
  • Free Packages are Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3055_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N3055G
Manufacturer onsemi
File Size 190.96 KB
Description Complementary Silicon Power Transistors
Datasheet download datasheet 2N3055G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCER VCB VEB IC IB PD 60 70 100 7 15 7 115 0.