2N3055
Description
VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage (RBE=100Ω) VEBO Emitter-Base Voltage IC Collector Current Continuous IB Base Current Total Power Dissipation at TC=25°C PD Derate above TC=25°C RθJC Thermal Resistance from Junction to Case TJ, TSTG Operating Junction and Storage Temperature Range 2N3055 100 60 70 7 15 7 115 0.657 1.52 -65 to +200 Unit V V V V A A W W/° C ° C /W °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Power Transistor (NPN).
Key Features
- General Purpose Switching and Amplifier Applications
- RoHS Compliant Power Transistor (NPN) 2N3055 Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-202, Method 208 20 grams (approx) TO-3
