2N3055 - NPN Power Transistor

TAITRON

General Description

VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage (RBE=100Ω) VEBO Emitter-Base Voltage IC Collector Current Continuous IB Base Current Total Power Dissipation at TC=25°C PD Derate above TC=25°C RθJC Thermal Resistance from Junction to Case TJ, TS

Key Features

General Purpose Switching and Amplifier.

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2N3055 npn power transistor by TAITRON - Datasheet Preview

Datasheet Details

Part number	2N3055
Manufacturer	TAITRON
File Size	219.60 KB
Description	NPN Power Transistor
Datasheet	2N3055 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistor (NPN) Features • General Purpose Switching and Amplifier Applications • RoHS Compliant Power Transistor (NPN) 2N3055 Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-202, Method 208 20 grams (approx) TO-3 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage (RBE=100Ω) VEBO Emitter-Base Voltage IC Collector Current Continuous IB Base Current Total Power Dissipation at TC=25°C PD Derate above TC=25°C RθJC Thermal Resistance from Junction to Case TJ, TSTG Operating Junction and Storage Temperature Range 2N3055 100 60 70 7 15 7 115 0.657 1.