Download 2N3055B Datasheet PDF
2N3055B page 2
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2N3055B Description

·Excellent Safe Operating Area ·DC Current Gain-hFE=70-140 @IC = 4A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;.