Multicomp 2N3055
Complementary Power Transistors
| Part No. | 2N3055 |
|---|---|
| Datasheet | 2N3055 Download |
| Manufacturer |  Multicomp |
| Description | Complementary Power Transistors |
| Buy | Stock & Price |
FEATURES
:● Power dissipation - PD = 115W at TC = 25°C.
● DC current gain hFE = 20 to 70 at IC = 4.0A.
● VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres NPN 2N3055 PNP MJ2955 15 Ampere Complementary Silicon Power Transistors 60 Volts 115 Watts TO-3
MAXIMUM RATINGS
Characteristic Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCBO VEBO IC IB PD TJ, TSTG Rating 60 70 100 7.0 15 7.0 115 0.657 -65 to +200 Unit V A W W/°C °C Page 1 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics Characteristic Symbol Thermal R...
