2N3055
Features
:
- Power dissipation
- PD = 115W at TC = 25°C.
- DC current gain h FE = 20 to 70 at IC = 4.0A.
- VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400m A.
Pin 1. Base 2. Emitter Collector(Case)
Dimensions Minimum Maximum
C 7.96 9.28
F 0.92 1.09
G 1.38 1.62
J 3.88 4.36
Dimensions : Millimetres
NPN 2N3055
PNP MJ2955
15 Ampere plementary Silicon
Power Transistors 60 Volts 115 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol
VCEO VCER VCBO VEBO
IC IB
TJ, TSTG
Rating
60 70 100
15 7.0 115 0.657 -65 to +200
Unit
A W W/°C °C
Page 1
31/05/05 V1.0
2N3055, MJ2955 plementary Power...
