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2N3906 Datasheet Preview

2N3906 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Low voltage( max .40V )
·Low current ( max .200mA )
·NPN complement to Type 2N3904.
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-speed switching
·Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IBM
Peak base current
Ptot
Total Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
-40
V
-40
V
-5
V
-200
mA
-300
mA
-100
mA
-500
mW
-65~150
-65~150
2N3906
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
MAX
250
UNIT
K/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N3906 Datasheet Preview

2N3906 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
2N3906
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage IC=-10mA, IE=0
V(BR)CEO Collector-emitter breakdown voltage IC= -1mA , IB=0
V(BR)EBO Emitter-base breakdown voltage
IE= -10mA, IC=0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA
VBE(sat)1 base-emitter saturation voltage
IC= -10mA; IB=-1mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA
ICBO
collector cut-off current
VCB =-30 V,IE = 0
IEBO
Emitter Cutoff Current
VEB=-6V; IC=0
hFE-1
DC Current Gain
IC= -0.1 mA ; VCE= -1V
hFE-2
DC Current Gain
IC=- 1 mA ; VCE=-1V
hFE-3
DC Current Gain
IC= -10 mA ; VCE=-1V
hFE-4
DC Current Gain
IC= -50 mA ; VCE=-1V
hFE-5
DC Current Gain
IC=-100 mA ; VCE=-1V
MIN MAX UNIT
-40
V
-40
V
-5
V
-0.2
V
-0.2
V
-0.85 V
-0.95 V
-0.05 μA
-0.05 μA
60
80
100 300
60
30
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N3906
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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2N3906 Datasheet PDF





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