Datasheet4U Logo Datasheet4U.com

2N3906S - PNP Transistor

Datasheet Summary

Description

Low voltage( max .40V ) Low current ( max .200mA ) APPLICATIONS Designed for high-speed switching

Amplifier applications.

📥 Download Datasheet

Datasheet preview – 2N3906S

Datasheet Details

Part number 2N3906S
Manufacturer INCHANGE
File Size 203.52 KB
Description PNP Transistor
Datasheet download datasheet 2N3906S Datasheet
Additional preview pages of the 2N3906S datasheet.

📁 Similar Datasheet

  • 2N3906S - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
  • 2N3906SC - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
  • 2N3906 - Silicon PNP Transistor (NTE)
  • 2N3906 - PNP switching transistor (NXP)
  • 2N3906 - PNP Transistor (Fairchild Semiconductor)
  • 2N3906 - PNP Transistor (Micro Commercial Components)
  • 2N3906 - PNP General-Purpose Amplifier (ON Semiconductor)
  • 2N3906 - PNP Silicon Transistor (AUK corp)
  • 2N3906 - Silicon PNP Transistor (Toshiba)
  • 2N3906 - SMALL SIGNAL PNP TRANSISTOR (STMicroelectronics)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA ) APPLICATIONS ·Designed for high-speed switching ·Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Ptot Total Power Dissipation TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient 2N3906S VALUE -40 -40 -5 -200 300 -55~150 -55~150 UNIT V V V mA mW ℃ ℃ MAX 250 UNIT K/W isc website：www.iscsemi.
Published: |