2N6033 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operatio.

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Datasheet Specifications

Part number: 2N6033
Manufacturer: INCHANGE
File Size: 215.02 KB
Datasheet: 2N6033-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A IB Base Current-Continuous PD

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2N6033 Silicon NPN Power Transistor INCHANGE

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