Inchange Semiconductor 2N6057
Silicon NPN Power Transistors
| Part No. | 2N6057 |
|---|---|
| Datasheet | 2N6057 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Built-in Base-Emitter Shunt Resistors●High DC current gain- hFE = 750 (Min) @ IC = 6A
●Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min)
●Complement to type 2N6050
APPLICATIONS
●Designed for general purpose amplifier and low frequency switching applications.ABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.17 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor isc Product Specification 2N6057ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) C...