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2N6126 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

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General Description

·Collector-Emitter Sustaining Voltage- : VCE(sat) = -0.6V(Max.)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type 2N6123 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6126 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A;

IB= -0.15A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A;

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6126.

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