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2N6329 - Silicon PNP Power Transistor

General Description

·Collector-Emitter Breakdown Voltage- : VCEO=-60V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -30 A 200 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6329 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6329 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=-30mA IEBO Emitter-Base Cutoff Current VBE=-5V ICEO Collector-Emitter Cutoff Current VCE= -30V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-15A;

IB= -2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -30A;

IB= -7.5A VBE(on)-1 Base-Emitter On Voltage IC=-15A;

Overview

isc Silicon PNP Power Transistor.