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2N6329 - Silicon PNP Power Transistor

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Datasheet Details

Part number 2N6329
Manufacturer INCHANGE
File Size 215.39 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet 2N6329-INCHANGE.pdf

2N6329 Product details

Description

Collector-Emitter Breakdown Voltage- : VCEO=-60V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -30 A

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