900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

2N6329 Datasheet Preview

2N6329 Datasheet

Silicon PNP Power Transistor

No Preview Available !

isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: VCEO=-60V(Min)
·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
·Power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNI
T
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PD
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-30
A
200
W
-65~200
Tstg
Storage Temperature Range
-65~200
2N6329
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6329 Datasheet Preview

2N6329 Datasheet

Silicon PNP Power Transistor

No Preview Available !

isc Silicon PNP Power Transistor
2N6329
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage Ic=-30mA
IEBO
Emitter-Base Cutoff Current
VBE=-5V
ICEO
Collector-Emitter Cutoff Current
VCE= -30V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-15A; IB= -2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -30A; IB= -7.5A
VBE(on)-1 Base-Emitter On Voltage
IC=-15A; VCE=- 4V
VBE(on)-2 Base-Emitter On Voltage
IC=-30A; VCE=- 4V
hFE-1
DC Current Gain
IC=-5A; VCE=- 4V
hFE-2
DC Current Gain
IC=-15A; VCE=-4V
hFE-3
DC Current Gain
IC=-30A; VCE=- 4V
MIN TYP. MAX UNIT
-60
V
-500 uA
-1
mA
-1.5
V
-3
V
-2
V
-4
V
25
12
6
30
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N6329
Description Silicon PNP Power Transistor
Maker INCHANGE
PDF Download

2N6329 Datasheet PDF






Similar Datasheet

1 2N6322 NPN Transistor
Solid States Devices
2 2N6322 Silicon Power Transistor
SavantIC
3 2N6322 NPN Transistor
INCHANGE
4 2N6323 NPN Transistor
SSDI
5 2N6324 NPN Transistor
Solid States Devices
6 2N6325 NPN Transistor
SSDI
7 2N6326 (2N6326 -2N6328) Silicon Power Transistor
SavantIC
8 2N6327 (2N6326 -2N6328) Silicon Power Transistor
SavantIC
9 2N6327 NPN Transistor
Microsemi





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy