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2N6329 - Silicon PNP Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : VCEO=-60V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Vol

Overview

isc Silicon PNP Power Transistor.