2N6331
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: VCEO=-100V(Min)
- Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
- Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-30
-65~200 ℃
Tstg
Storage Temperature Range
-65~200 ℃
2N6331 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
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