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2N6338, 2N6341
High-Power NPN Silicon Transistors
. . . designed for use in industrial−military power amplifier and
switching circuit applications.
• High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min) − 2N6338
= 150 Vdc (Min) − 2N6341
• High DC Current Gain −
hFE = 30 − 120 @ IC = 10 Adc
= 12 (Min) @ IC = 25 Adc
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc
tr = 0.3 ms (Max)
ts = 1.0 ms (Max)
tf = 0.
2N6338 Datasheet
