2SA1002
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
VCEO Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-12
℃
Tstg
Storage Temperature
-55~150 ℃
2SA1002 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
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