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2SA1306A - PNP Transistor

General Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A Complement to Type 2SC3298/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

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isc Silicon PNP Power Transistors DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A ·Complement to Type 2SC3298/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SA1306 -160 V 2SA1306A -180 2SA1306 -160 VCEO Collector-Emitter Voltage V 2SA1306A -180 VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -5 V -1.5 A -0.