2SA1306A Overview
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A ·plement to Type 2SC3298/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor 2SA1306/A...
