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2SA1328 Datasheet Preview

2SA1328 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -6A
·High Switching Speed
·Complement to Type 2SC3345
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
-2
A
40
W
150
Tstg
Storage Temperature Range
-55~150
2SA1328
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SA1328 Datasheet Preview

2SA1328 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
2SA1328
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -60V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -1V
hFE-2
DC Current Gain
IC= -6A ; VCE= -1V
fT
Current-Gain—Bandwidth Product
IC= -1A ; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -6A ,RL= 5Ω,
IB1= -IB2= -0.3A,VCC= -30V
MIN TYP. MAX UNIT
-50
V
-0.4
V
-1.2
V
-10 μA
-10 μA
70
240
40
70
MHz
320
pF
0.3
μs
1.0
μs
0.5
μs
hFE-1 Classifications
O
Y
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SA1328
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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2SA1328 Datasheet PDF





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