2SA1328 - Silicon PNP Transistor

Toshiba

Key Features

. Low Collector Saturation Voltage : V CE ( sat )=-0.4V(Max. ) at I C =-6A . High Speed Switching Time : t stg =l .0jus(Typ . . Complementary to 2SC3345 Unit in mm 1C.3MAX. 03.6±CL2.

2SA1328 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA1328
Manufacturer	Toshiba
File Size	122.25 KB
Description	Silicon PNP Transistor
Datasheet	2SA1328 Datasheet

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Full PDF Text Transcription (Reference)

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: ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : V CE ( sat )=-0.4V(Max.) at I C =-6A . High Speed Switching Time : t stg =l .0jus(Typ . . Complementary to 2SC3345 Unit in mm 1C.3MAX. 03.6±CL2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT 1.5 MAX.. 0.7 6 Collector-Base Voltage v CBO -60 Collector-Emitter Voltage VCEO -50 Emitter-Base Voltage v EBO -6 Collector Current ic -12 Base Current IB -2 Collector Power Dissipation (Tc=25°C) PC 40 Junction Temperature 150 2.5 4 2.5 4 w c5 -do J -,! "2 3"- to 1. BASE 2. COLLECTOR (HEAT SINK) 3.