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2SA1328 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -6A ·High Switching Speed ·Complement to Type 2SC3345 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1328 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1328 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;

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